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GaN Process Development Engineer

MicroTECH Global Ltd
Job LocationNewcastle Upon Tyne
EducationNot Mentioned
SalarySalary negotiable
IndustryNot Mentioned
Functional AreaNot Mentioned
Job TypePermanent , full-time

Job Description

JOB AD:ROLE: GaN Process Development EngineerLOCATION: Newcastle Upon Tyne (UK)SALARY: Highly Competitive Salary + Bonus & BenefitsAbout the companyMy client is a UKs leading full-service compound semiconductor development and fabrication company.Develop and manufacture advanced compound semiconductor & MEMs devices used in a variety of applications including the next-generation communication systems & high-efficiency power conversion system for energy and e-mobility.Responsibilities:

  • Fabricate batches of wafers with MMIC, active and passive devices on GaN on SiC/Si/Sapphire throughout the full process flow including e-beam, stepper and contact lithography, metallization, dry and wet etch, and DC & RF test.
  • Work closely with the advanced process development engineers to define new process requirements and targets, design/integrate wafer fab process flows.
  • Create test structure layouts to fabricate and characterize new device technologies and demonstrate margin for volume manufacturing.
  • Specify critical in-line and PCM process control metrics for high volume manufacturing.
  • Define test conditions and conduct wafer-scale DC/RF testing of PCM structures and discrete active devices.
  • Conduct RF testing of discrete HEMTs, passives. Develop appropriate device models and perform device simulation.
  • Interpret the above test results and support the development of the company 0.5m and 0.25m Process Design Kits (PDKs).
  • Participate in on-going continuous yield/performance efforts and establish PDKs for GaN devices.
  • Implement new quality techniques and actively participate in resolving quality issues.
The ideal Candidate & Essential requirements:
  • Qualified to a degree or Ph.D. level in EE, Physics, Chemistry, Material Science, or related discipline.
  • At least 3 years of cleanroom fabrication experience.
  • Significant hands-on experience in fabricating compound semiconductor or MEMS devices. Skills required include lithography (e-beam and/or stepper experience required), etch (wet & dry), deposition (dielectric, metal, and electroplating), Mask layout designexperience, Failure Analysis and Surface Analytical Techniques, Wafer dicing, wire bonding, and package design.
  • Good knowledge and understanding of GaN devices transistors/MMICs, and materials (device physics, processing, measurements, modelling, simulation).
  • In-depth knowledge of process steps required to make power/RF GaN devices and experience with wide band-gap material processing is preferred for this role.
  • Design knowledge of RF products, compound semiconductors, and MEMS devices would be key assets appropriate for this role.
  • Familiarity with process control (SPC) and design-for-manufacture practices.
  • Ability to work independently with minimum supervision.

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